Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle

A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of thin (100 nm) coating masking metallic patterned (features) with critical dimension (CD) nanometers thicker quartz The features can be damaged by electrostatic discharge (ESD) when exposed to the environment charge and caused deformed IC eventually device difunctional. Semiconductor equipment materials industry (SEMI) standard established allowable based characterization ESD threshold voltage binary reticle. However, there another type which phase-shift mask (PSM), has not been characterized its voltage. direct current (DC) applied directly structures CD 80 nm, 110 160 nm. surface recorded at all levels stress from 1 100 V. current–voltage (IV) curve physical inspection results each cell are then reviewed classified. yielded no electric field induced migration (EFM) defect breakdown occurred any structures. cathode’s metal work function identified as factor that influences PSM